摘要
We proposed an ultra-thin Si-padded Si3N4 waveguide consisting of a very thin Si slab underneath a Si3N4 strip separated by a SiO2 layer. The Si slab and the Si3N4 strip forma hybrid waveguide mode, where the mode field is confined in these two structures. The measured waveguide propagation loss is 0.055 dB/cm, and the bending loss is 0.09 dB per 90° bend, depending on the bending radius. Because part of the waveguide mode is distributed in the Si slab, this waveguide structure has potential for implementing low-loss and highspeed photonic integrated circuits.