Abstract
Photoconductive (PC) antennas fabricated on InP bombarded with 180 keV protons of different dosages (InP:H + ) all exhibit a useful bandwidth of about 30 THz, comparable to that of the LT-GaAs PC antenna. The peak signal current of the best InP: H + device (dosage of 10 15 ions/cm 2 ) is slightly higher than that of the LT-GaAs one, while the signal-to-noise ratio (SNR) of the former is about half of that of the latter due to lower resistivity. This suggests that InP: H + can be a good substrate for THz PC antennas with proper annealing and/or implantation recipe. © 2004 Optical Society of America.