摘要
Various excimer laser wavelengths have been used, both in mid‐ and deep‐UV regions—308 nanometers (nm) from XeCl, 249 nm from KrF and 222 nm from KrCl–to delineate images in a number of resists. The quality of the images obtained with the laser exposures, the absence of speckle, and the insignificant loss of resist reciprocity make excimer laser lithography an attractive technique. The ultrafast exposures possible with this method significantly lessen the sensitivity requirements on deep UV resists, making the choice of the resist more flexible. Copyright © 1983 Society of Plastics Engineers, Inc.