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Ultrafast spin-polarized lasing in a highly photoexcited semiconductor microcavity at room temperature
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Ultrafast spin-polarized lasing in a highly photoexcited semiconductor microcavity at room temperature

Feng-Kuo Hsu, Wei Xie, Yi-Shan Lee, Sheng-Di LinChih-Wei Lai
Physical Review B - Condensed Matter and Materials Physics, 卷.91(19), 195312
05/2015

摘要

Electronic Optical and Magnetic Materials Condensed Matter Physics
We demonstrate room-temperature spin-polarized ultrafast (∼10ps) lasing in a highly optically excited GaAs microcavity. This microcavity is embedded with InGaAs multiple quantum wells in which the spin relaxation time is less than 10 ps. The laser radiation remains highly circularly polarized even when excited by nonresonant elliptically polarized light. The lasing energy is not locked to the bare cavity resonance, and shifts ∼10meV as a function of the photoexcited density. Such spin-polarized lasing is attributed to a spin-dependent stimulated process of correlated electron-hole pairs. These pairs are formed near the Fermi edge in a high-density electron-hole plasma coupled to the cavity light field.

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