摘要
We have measured ultrafast charge carrier dynamics in monolayers and trilayers of the transition metal dichalcogenides MoS 2 and WSe 2 using a combination of time-resolved photoluminescence and terahertz spectroscopy. We recorded a photoconductivity and photoluminescence response time of just 350 fs from CVD-grown monolayer MoS 2 , and 1 ps from trilayer MoS 2 and monolayer WSe 2 . Our results indicate the potential of these materials as high-speed optoelectronic materials. (Graph Presented).