摘要
Owing to its atomically thin thickness, layer-dependent tunable band gap, flexibility, and CMOS compatibility, MoS ₂is a promising candidate for photodetection. However, mono-layer MoS2-based photodetectors typically show poor optoelectronic performances, mainly limited by their low optical absorption. In this work, we hybridized CVD-grown monolayer MoS ₂with a gold nanodisk (AuND) array to demonstrate a superior visible photodetector through a synergetic effect. It is evident from our experimental results that there is a strong light-matter interaction between AuNDs and monolayer MoS ₂ , which results in better photodetection due to a surface trap state passivation with a longer charge carrier lifetime compared to pristine MoS ₂ . In particular, the AuND/MoS ₂system demonstrated a photoresponsivity of8.7 × 10⁴A/W, specific detectivity of6.9 × 10¹³Jones, and gain1.7 × 10⁵at31.84 μ W/cm²illumination power density of 632 nm wavelength with an applied voltage of 4.0 V for an AuND/MoS ₂ -based photodetector. To our knowledge, these optoelectronic responses are one order higher than reported results for CVD MoS ₂ -based photodetector in the literature.