Abstract
We describe the fabrication of ultrahigh-density Β-Ga <sub>2</sub> O <sub>3</sub> Schottky and N-doped Β-Ga <sub>2</sub> O <sub>3</sub> /Β-Ga <sub>2</sub> O <sub>3</sub> p-n nanowire junctions via microwave plasma enhanced chemical vapor deposition and thermal chemical vapor deposition. The electron transport mechanisms with Schottky and p-n nanowire junctions were characterized by current-voltage (I- V <sub>sd</sub> ) measurements. The I- V <sub>sd</sub> curve of different amount of the nanowires is greatly influenced by the potential barriers on the gap of Schottky nanowire junctions. N <sub>2</sub> plasma treatment led to rectifying electrical characteristics, suggesting that near surface was compensated by ion-induced deep-level states, which can be verified by cathodoluminescence spectrum. The current transport through p-n nanowire junctions is dominated by the deep-level-assisted tunneling mechanism for -0.8 V< V <sub>sd</sub> <0.6 V and by the space-charge limited conductive mechanism beyond 0.6 V. The detailed I- V <sub>sd</sub> characteristics of the p-n nanowire junctions have been investigated in the temperature range 323-373 K. © 2011 The Electrochemical Society.