摘要
Niobium disulfide (NbS2), a two-dimensional transition metal dichalcogenide with semi metallic conductivity and high surface activity, offers promising properties for electronic and sensing applications. In this study, we report a high-performance NO2 gas sensor based on a heterostructure comprising a spin-coated In2O3 film on a semi-metallic NbS2 film. The NbS2 was synthesized via chemical vapor deposition (CVD) and subsequently transferred to a substrate prior to In2O3 coating. Pristine In2O3 exhibited limited gas response, and NbS2 alone was inert to NO2; however, the NbS2/In2O3 heterostructure demonstrated a significant enhancement in sensing performance. This included a high response of 7520 % at 500 ppb and 46.5 % at 10 ppb, along with reasonable response (∼8 s) and recovery (∼155 s) times. The sensor maintained robust performance across a wide humidity range (25–90 % RH), showed excellent selectivity against interfering gases, and remained stable over one month of operation. These findings highlight the potential of semimetal/semiconductor heterojunctions for developing room-temperature gas sensors with high sensitivity and environmental stability
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•High-performance NO2 sensing achieved using NbS2/In2O3 heterostructures.•Ultra-sensitive detection down to 10 ppb with strong response.•Fast and reversible response at room temperature.•Stable operation across wide humidity conditions.•Excellent selectivity and long-term stability.