摘要
Spin-transfer torque magnetic random-access memory (STT-MRAM) is a leading candidate for embedded nonvolatile memory (NVM) technologies. However, further improvements in energy efficiency and device reliability are critical to meet the demands of next-generation computing systems. In this study, we propose an enhanced STT-MRAM design featuring an ultrathin magnesium-based composite free layer (Mg-CFL) to replace the conventional tantalum-based CFL (Ta-CFL). The Mg-CFL significantly enhances perpendicular magnetic anisotropy (PMA), increasing the thermal stability factor () without elevating the switching current (ISW), thus improving STT efficiency (/ISW). Additionally, the optimized free-layer configuration increases the breakdown voltage (VBD) of the magnetic tunnel junction (MTJ), providing a wider write margin and enhanced robustness against electrical stress. These advancements contribute to superior device performance and reliability for next-generation energy-efficient NVM applications.