Abstract
Ultrathin-body InAsSb-on-insulator n-type field-effect transistors (FETs) with ultrahigh electron mobilities are reported. The devices are obtained by the layer transfer of ultrathin InAs 0.7 Sb 0.3 layers (thickness of 7-17 nm) onto Si/SiO 2 substrates. InAsSb-on-insulator FETs exhibit an effective mobility of ∼3400cm 2 V̇s; for a body thickness of 7 nm, which represents ∼2× enhancement over InAs devices of similar thickness. The top-gated FETs deliver an intrinsic transconductance of ∼0.56mSμm (gate length of ∼500 nm) at V DS = 0.5V with I ONI OFF of 10 2 -10 3 . These results demonstrate the utility of the transfer process for obtaining high-mobility n-FETs on Si substrates by using mixed anion arsenide-antimonide as the active channel material. © 2012 IEEE.