摘要
In this paper, we investigate the sensing capabilities of 8 &null 8 complementary metal oxide semiconductor (CMOS) micromachined structures with thermal sensing transistors operating in both the sub-threshold and saturation region for uncooled infrared detection. Unlike conventional microbolometer materials that require additional deposition steps, we leverage transistors integrated within a CMOS process to achieve comparable sensitivity in response to infrared-induced temperature changes. The enhanced sensitivity is attributed to the variation in carrier mobility and threshold voltage of the transistors. The sensors are fabricated in a 0.35 &null CMOS process, each occupying an area of 46 &null 36 &null <sup>2</sup> . In our experiments, the operation in the sub-threshold region exhibited a responsivity of 12 &null 10 <sup>6</sup> V/W and a noise equivalent temperature difference (NETD) of 563 mK at atmospheric pressure. In contrast, the saturation region presented an improved responsivity of 17.2 &null 10 <sup>6</sup> V/W and a lower NETD of 390 mK at atmospheric pressure. The results demonstrate the great potential of CMOS transistors as promising devices for uncooled infrared detection.