Abstract
In this article, we describe the fabrication of a monolithically integrated 1 × 12 array of GaInAs/InP planar photodiodes, which has highly uniform characteristics in dark current, capacitance and crosstalk capacitance, quantum efficiency, and the frequency bandwidth at 3-dB reduction with a deviation of ±1%. Besides, each diode on the array exhibits an extremely low dark current of 75 pA, a low capacitance of ∼2.3 pF and a crosstalk capacitance between adjacent diodes of ∼0.36 pF, a high quantum efficiency of 95% at 1.3 μm and 89% at 1.53 μm, the 3-dB frequency of >2 GHz, and a small 1/f noise component over a wide operating voltage range. Also, the diode on the array has a negligible degradation after the burn-in test of -20 V, 200 °C, and 20 h. © 1997 IEEE.