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Use of a supercritical fluid treatment to improve switching region in resistive random access memory
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Use of a supercritical fluid treatment to improve switching region in resistive random access memory

S.-K. Lin, M.-C. Chen, T.-C. Chang, C.-H. Lien, C.-H. Wu, Y.-S. Lin, P.-Y. Wu, Y.-F. Tan, W.-C. Huang, Y.-C. Zhang, …
Applied Physics Express, 卷.15(6)
2022
DOI: https://doi.org/10.35848/1882-0786/ac7031
Web of Science ID: WOS:000800667000001

摘要

indium-tin oxide (ITO) resistive random access memory (RRAM) supercritical fluid switching region Effluent treatment RRAM Tin oxides High resistance Indium-tin oxide Low-resistance state Oxygen ions Random access memory Reset voltage Resistive random access memory State resistance Supercritical fluid treatments Switching regions Supercritical fluids
This work investigates the influence of a supercritical fluid (SCF) treatment on the characteristics of resistive random access memory. A comparison between the experimental results for the device at initial, after the overset process, and after the SCF treatment, shows that the treatment dopes oxygen ions and generates defects in the switching region (SR). Moreover, the changes in the ratio of the components of the SR after the SCF treatment improve memory characteristics, including a lower set/reset voltage (V SET/V RESET), and higher resistances at low resistance state and high resistance state. © 2022 The Japan Society of Applied Physics.

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