摘要
We report the growth of high quality topological insulator Bi 2 Se 3 thin films on a single layer, transitional metal dichalcogenide MoS 2 film via van der Waals epitaxy in a planar geometry. In stark contrast to the reported growth of using 3-D crystalline substrates such as Al 2 O 3 (0001), Bi 2 Se 3 thin films grown on a 2-D template made of single layer MoS 2 showed excellent crystallinity starting immediately from the growth of the first quintuple layer. Excellent crystallinity of Bi 2 Se 3 thin films is attained, with the increased size of the triangular shaped Bi 2 Se 3 domains and 2-3 times enhancement in mobility, along with the observation of Shubnikov-de Haas oscillations in the magnetoresistance. Our approach of adopting a van der Waals type template may be extended to the thin film growth of other low dimensional layered materials.