Vertical Al2Se3/MoSe2 heterojunction on sapphire synthesized using ion beam

Hsu-Sheng Tsai; Jhe-Wei Liou; Yi-Chung Wang; Chia-Wei Chen; Yu-Lun Chueh; Ching-Hung Hsiao; Hao Ouyang; Wei-Yen Woon; Jenq-Horng Liang

doi:10.1039/c6ra28273c

Vertical Al2Se3/MoSe2 heterojunction on sapphire synthesized using ion beam

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Vertical Al2Se3/MoSe2 heterojunction on sapphire synthesized using ion beam

Hsu-Sheng Tsai, Jhe-Wei Liou, Yi-Chung Wang, Chia-Wei Chen, Yu-Lun Chueh, Ching-Hung Hsiao, Hao Ouyang, Wei-Yen Woon 和 Jenq-Horng Liang

RSC Advances, 卷.7(17), 頁碼.10154-10157

2017

DOI: https://doi.org/10.1039/c6ra28273c

摘要

Chemistry (all)

Chemical Engineering (all)

The vertical Al ₂ Se ₃ /MoSe ₂ heterojunction on sapphire was first fabricated via an ion beam-assisted process. The MoSe ₂ was formed via Mo selenization, while Al ₂ Se ₃ was formed via Se substitution for O in sapphire. The applications of this heterojunction will be developed in the future.

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詳細資料

題名: Vertical Al2Se3/MoSe2 heterojunction on sapphire synthesized using ion beam
創作者：: Hsu-Sheng Tsai (作者) - Institute of Nuclear Engineering and Science , National Tsing Hua University
Jhe-Wei Liou (作者) - Department of Physics , National Central University
Yi-Chung Wang (作者) - National Tsing Hua University
Chia-Wei Chen (作者) - National Tsing Hua University
Yu-Lun Chueh (作者) - Institute of Nuclear Engineering and Science , National Tsing Hua University
Ching-Hung Hsiao (作者) - National Tsing Hua University
Hao Ouyang (作者) - National Tsing Hua University
Wei-Yen Woon (作者) - Department of Physics , National Central University
Jenq-Horng Liang (作者) - Institute of Nuclear Physics
學術資源類型: 期刊文章
出版日期: 2017
出版資訊: RSC Advances, 卷.7(17), 頁碼.10154-10157
語言: 英語

Vertical Al2Se3/MoSe2 heterojunction on sapphire synthesized using ion beam

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