Abstract
Vertically well-aligned single crystal Ni 31 Si 12 nanowire (NW) arrays were epitaxially grown on Ni 31 Si 12 films preferentially formed on Ni foil substrates with a simple vapor phase deposition method in one step. The Ni 31 Si 12 NWs are several micrometers in length and 50-80 nm in diameter. The resistivities of the Ni 31 Si 12 NWs were measured to be 51 μΩ cm by four-terminal electrical measurement. The NWs can carry very high currents and possess excellent field emission properties. The growth of vertically well-aligned Ni 31 Si 12 NW arrays shall lead to significant advantages in the fabrication of vertical Si nanodevices. © 2008 American Institute of Physics.