Abstract
Characteristics of polycrystalline silicon films deposited both on SiO 2 and Corning 7059 glass substrates are presented in this paper. The silicon films were deposited by a hydrogen dilution method using electron cyclotron resonance chemical vapor deposition at 250°C without any thermal or laser annealing. The hydrogen dilution ratio was between 90% and 99%. The geometric configuration and surface morphology of polycrystalline silicon films were studied by atomic force microscopy. The largest grain size of the deposited silicon films, identified by plan- view transmission electron microscopy dark-field imaging, was about 1 μm. From Raman spectrum, the crystalline fraction of polycrystalline silicon films was identified to be nearly 100%. The polycrystalline silicon was found to be preferentially (111)- and (110)-oriented, from the X-ray diffraction pattern. © 1995 The Japan Society of Applied Physics.