Abstract
This paper presents the results of low temperature polycrystalline silicon growth on SiO 2 and glass substrates. The silicon films were deposited with the hydrogen dilution method by electron cyclotron resonance chemical vapor deposition at or below 250°C without any thermal annealing. Hydrogen passivation of the SiO 2 surface was applied to enhance the grain growth of poly-Si deposition. The polycrystallinity of the silicon films was established by transmission electron microscopy (TEM), Raman scattering, and X-ray diffraction. The maximum grain size was about 1 μm. The crystalline fraction of the polycrystalline silicon (poly-Si) films was near 100% as identified by Raman shift spectra. The preferred orientations of the poly-Si film were 〈110〉 and 〈111〉. Poly-Si films with a maximum grain size of 7000 Å were formed at a substrate temperature as low as 100°C.