摘要
A novel organic/graphene/inorganic -heterostructure, consisting of a graphene layer encapsulated by n- and p-type photoactive materials with complementary absorptions, enables the control of dual n- and p-typed transport behaviors of a graphene transistor under selective UV or visible light illumination. A graphene-based p-n junction created by spatially patterned wavelength-selective illumination using the organic/graphene/inorganic heterostructure is also demonstrated.