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Wet oxidation of thin AlAs in cylindrical composite of GaAs/AlAs/GaAs
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Wet oxidation of thin AlAs in cylindrical composite of GaAs/AlAs/GaAs

Sun-Chien Ko, Sanboh Lee and Y.T. Chou
Materials Chemistry and Physics, Vol.130(3), pp.1341-1345
01/11/2011
Appears in  keyword about Physics

Abstract

Diffusion Oxidation Semiconductors Thin film
Lateral wet oxidation in a cylindrical composite, GaAs/AlAs/GaAs, with varying thickness of the AlAs layer has been investigated. The oxidation depth in AlAs was measured in the temperature range of 400-480 °C. At given temperature and time, the depth increases with the increase in thickness. The thickness effect was successfully interpreted based on the kinetic model of boundary layer diffusion. The results are consistent with the findings from early studies on samples of square and rectangular cross-sections with the same activation energy of the thermal process. © 2011 Elsevier B.V. All rights reserved.

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