Abstract
Lateral wet oxidation of thin (1000 Å) films of AlAs 0.1 Sb 0.9 were studied at temperatures between 300 to 450 °C. The oxidation kinetics, oxide structure, and oxide morphology of the alloy was studied in order to determine the optimal oxidation conditions. It was found that the diffusion limited oxidation was accompanied by a change in oxidation morphology. An interfacial layer right behind the oxidation front containing less segregated Sb than the rest of the oxidized layer that became more distinct with higher oxidation temperatures was also found to occur.