摘要
An AlGaN/GaN HEMT-compatible lateral field-effect diode has been used for zero-bias microwave detector application. Using the versatile fluorine plasma ion treatment technique, we have been able to realize a diode that exhibits strong nonlinearity near zero bias, thus, eliminating DC supplies in microwave detector circuits. The AlGaN/GaN microwave detectors deliver high sensitivity, wide dynamic range and high temperature operating capability. The maximum zero-bias curvature coefficient (γ v ) measured are 11.6 V -1 and 3.2 V -1 at 50°C and 250°C, respectively, yielding a directly-measured sensitivity (β v ) of 1027 mV/mW at 50°C and 466 mV/mW at 250°C. The peak conjugately-matched sensitivity (β v,opt ) is projected to be 9030 mV/mW at 2 GHz at 50°C. At room temperature, the wide dynamic range of 53 and 54 dB at 2 and 5 GHz are observed, respectively, both of which are the highest values reported so far. © 2010 IEEE.