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X-ray studies of misfit dislocations in the interface of epitaxial Nb films on sapphire
Journal article

X-ray studies of misfit dislocations in the interface of epitaxial Nb films on sapphire

C.H. Lee and K.S. Liang
Acta Metallurgica Et Materialia, Vol.40(SUPPL.)
1992

Abstract

The interface structure of MBE grown Nb films on sapphire substrates was studied using grazing incidence X-ray diffraction and X-ray reflectivity measurements. We find that the diffuse X-ray scattering measured on these films can be attributed to a soliton-type lattice deformation due to the presence of misfit dislocations in the interface. The proposed atomistic picture of the interface is consistent with high resolution TEM results by Mayer et al. © 1992.

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