Abstract
X-ray diffraction was employed to study the structure of the Ag Si(111) interface. Samples were prepared by vacuum deposition of Ag onto Si(111)-(7 × 7) followed by either annealing to 400°C or no anneal. The annealed and unannealed samples show significantly different Si-substrate truncation-rod intensity profiles. The results are explained in terms of structural features of the (7 × 7) reconstruction for the unannealed sample and a fairly abrupt (1 × 1) interface for the annealed sample. © 1995.