XAS and TEM studies on ferromagnetic GeMn prepared by Mn ion implantation and helium ion beam induced epitaxial crystallization

Tung Yuan Hsiao; ChienHsu Chen; Jaw-Wern Chiou; Huan Niu

doi:10.1016/j.nimb.2019.03.040

XAS and TEM studies on ferromagnetic GeMn prepared by Mn ion implantation and helium ion beam induced epitaxial crystallization

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XAS and TEM studies on ferromagnetic GeMn prepared by Mn ion implantation and helium ion beam induced epitaxial crystallization

Tung Yuan Hsiao, ChienHsu Chen, Jaw-Wern Chiou 和 Huan Niu

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 卷.447, 頁碼.34-37

15/05/2019

DOI: https://doi.org/10.1016/j.nimb.2019.03.040

Web of Science ID: WOS:000468716100005

摘要

Diluted magnetic semiconductors

Extended X-ray absorption fine structure

Implantation

X-and ray absorption spectrum

In this study, we prepared a p-type Ge thin film and then implanted Mn ions in it at room temperature. P-type Ge thin film was made by gallium ion implantation in to an n-type Ge substrate to provide additional hole carriers. Mn ions were implanted into the same layer with Ga ions. Helium ion beam induced epitaxial crystallization with 2 MeV was used to growth GeMn thin films. The results show the beam annealed GeMn sample has been regrowth and has magnetoresistance.

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題名: XAS and TEM studies on ferromagnetic GeMn prepared by Mn ion implantation and helium ion beam induced epitaxial crystallization
創作者：: Tung Yuan Hsiao - Accelerator Laboratory, Nuclear Science and Technology Development Center, National Tsing Hua University, Hsinchu 30013, Taiwan
ChienHsu Chen - National Tsing Hua University
Jaw-Wern Chiou - National University of Kaohsiung
Huan Niu - National Tsing Hua University
出版者: Elsevier B.V
總頁數: 4
學術資源類型: 期刊文章
出版日期: 15/05/2019
出版資訊: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 卷.447, 頁碼.34-37
語言: 英語

XAS and TEM studies on ferromagnetic GeMn prepared by Mn ion implantation and helium ion beam induced epitaxial crystallization

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