Abstract
We report current injected stimulated emission in AlGaInP/Ga 0.65 In 0.35 P heterostructures grown on commercially available GaAs 0.6 P 0.4 substrates by gas source molecular-beam epitaxy. Room temperature photoluminescence of bulk GaInP grown on these substrates exhibited a full-width half-maximum of 36 meV, which is equal to the narrowest reported. At 77 K laser devices exhibited yellow stimulated emission near 5735 angstrom with a current density of 900A/cm 2 .