Abstract
The first current injection lasing action in AlGaInP/Ga 0.65 In 0.35 P heterostructures grown on commercially available GaAs 0.6 P 0.4 substrates is reported. At 77K, laser diodes exhibited threshold current densities of 900A/cm 2 with yellow stimulated emission near 5735 angstrom. This is the shortest current injection lasing wavelength ever achieved in a III-V compound semiconductor.