Abstract
Epitaxial films of In 0.53 Ga 0.47 As lattice-matched to InP substrates have been grown by molecular beam epitaxy (MBE). The carrier concentrations were as low as 3×10 15 cm -3 . High-speed back-illuminated PIN photodiodes for use at 0.95-1.6 μm wavelength were made from the resulting layers.