Abstract
Metal-insulator-metal (MIM) capacitors with ZrLaO x /ZrTiO x /ZrLaO x laminate as the insulator were explored in this work. Single ZrTiO x dielectric was found to have a negative quadratic voltage coefficient of capacitance (VCC-α) with a high κ value of 22.5. By integrating this dielectric with ZrLaO x which provides a positive VCC- α and a high κ value of 25.8, the canceling effect of VCC-α can be achieved while a high capacitance density can be maintained. MIM capacitors with the laminated structure display desirable characteristics in terms of a capacitance density of 14.6 fF/muhbox{m} 2 , a low VCC- α of 33 ppm/V 2 , negligible frequency dispersion, and satisfactory leakage current of 1.6 × 10 -6 A/cm 2 at -1.5 V. These results also well meet the International Technology Roadmap for Semiconductors requirement set for 2020. © 2012 IEEE.