摘要
The ferroelectric polarization stability and dielectric characteristics of ZrO2-HfO2 superlattice (SL) ferroelectric layer Metal-Ferroelectric-Metal (MFM) capacitor fabricated with various post-metal annealing (PMA) temperatures were presented. It was demonstrated that ZrO2-HfO2 SL MFM capacitors with increased post metallization PMA temperature (i.e., 600 degrees C) showed improved polarization stability with almostwake- up free and polarization fatigue free characteristics. In this work, we have shown that highly stable remanent polarization (2P(r)@ 3MV/cm) of similar to 30 mu C/cm(2) with small variation (Delta 2P(r) <= 2 mu C/cm(2); Delta 2P(r) / 2P(r), pristine <= 9 %) up to 1011 cycles of field cycling were exhibited by the atomic layer deposition (ALD) deposited ZrO2-HfO2 superlattice with 600 inverted perpendicular C PMA. To our knowledge, the nearly "wake- up"- free and fatigue-free polarization behavior up to 10(11) cycles are among the best polarization stability for the hafnium zirconium oxide based MFM capacitors sustained endurance tests for more than 10(10) cycles.