Abstract
In this paper, we describe the fabrication of a monolithically integrated 1 x 12 array of 1.5 4im AlGalnAs/InP strain-compensated multiple-quantuni-well (MQW) lasers, which has high reliability and highly uniform characteristics in low threshold current, slope efficiency, and lasing wavelength. Be- sides, each diode on the array exhibits a high characteristic temperature of 88 K and a low slope-efficiency drop of less than l dB between 20-80 °C and a lasing wavelength of 1510 nm at 20 °C and 20 mA. Also, the diode on the array has a maximum reso- nance frequency of above 8 GHz or 3-dB modulation bandwidth of 12 GHz. © 1999 IEEE.