Abstract
Heat transport inside the thin dielectric films (30 nm-300 nm) plays an important role in many IC and MEMS devices. The application of 3w method is investigated to achieve the measurement of thermal conductivities for two different kinds of SiO2 film. Based on 3w method, the apparent thermal conductivity, intrinsic thermal conductivity, and interface resistance have been analyzed. Besides, temperature is an effect factor to thermal conductivity, which will be discussed latter. This simple method can be broadly applied upon the measurement of other dielectric film.