Abstract
Local and selective far-infrared ray laser annealing (FIR-LA) process with very short heating duration (＜10us) and low substrate temperature (＜400℃) enables sequentially stacked gatefirst nanowire FETs (NWFETs), including 3D+ Si NWFET and poly-Ge junctionless (JL) NWFET, and BEOL compatible monolithic 3D+ nanoelectronics. The 3D+ Si NWFETs, demonstrated by green nano-second laser crystallization (GNS-LC) and FIR-LA processes exhibit steep subthreshold swing (＜90mV/dec.) and high driving current (n-type: 310uA/um and p-type: 220μA/μm). The7nm poly-Ge JLNWFET shows high I_on/I_off ratio (＞5×10^4) and small DIBL. Furthermore, the thus fabricated low driving voltage 6T SRAM shows a static noise margin (SNM) of 130 mV at V_d=0.4V enabling the low power and low cost 3D+IC for internet of things (IoTs).