Abstract
During the processing of silicon wafers, due to mismatch of mechanical properties between layers warpage of the wafers could occurs. For silicon nitride thin film, it has many important applications in semiconductor industries. When the film is deposited, its quality can be affected by processing temperature and pressure parameters, which leads to the occurrence of wafer warpage and affects the required high flatness of the subsequent processes. Therefore, this study intends to estimate the wafer warpage and to understand induced internal stress through the present simulation methodology. According to finite element analysis, only a 4.3% error for the estimated internal stress of SiNx film after warping is acquired as compared with corresponding measured data. Consequently, the magnitude of intrinsic stress and warpage of SiNx film deposited on silicon wafers can be quickly predicted by the present simulation technique.