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PSEUDOPOTENTIAL CALCULATION OF THE STACKING FAULT ENERGY IN SILICON.
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PSEUDOPOTENTIAL CALCULATION OF THE STACKING FAULT ENERGY IN SILICON.

L.J. Chen and L.M. Falicov
Phil Mag, Vol.29(1), pp.1-8
01/1974

Abstract

Engineering (all) Physics and Astronomy (all)
A calculation of the intrinsic stacking fault energy in silicon has been carried out to second order perturbation in the pseudopotential formalism. The calculated result is 55 erg/cm**2, which is in remarkablky good agreement with the experimental value.

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