摘要
一種原子層沉積方法及利用所述方法形成的鈷金屬膜。所述原子層沉積方法包括以下步驟。將基板置於反應腔室中。進行至少一個沉積循環，以在基板上沉積金屬膜。其中至少一個沉積循環包括以下步驟。向反應腔室中通入金屬前驅物。通入氫電漿，以與吸附在基板上的金屬前驅物發生反應，並形成金屬膜。對金屬膜進行退火製程。其中至少一個沉積循環是在紫外光照射及氫氣氣氛下進行的。
An atomic layer deposition method and a cobalt metal film formed by the method are provided. The atomic layer deposition method includes the following steps. The substrate is placed into a chamber. At least one deposition cycle is performed to deposit a metal film on the substrate, wherein the at least one deposition cycle includes the following steps. Metal precursor is introduced into the chamber. Hydrogen plasma is introduced to react with the metal precursor absorbed on the substrate and form the metal film. A reflow process is performed on the metal film. The at least one deposition cycle is performed in a hydrogen atmosphere under UV light irradiation.