Abstract
This invention is about the equipment of 300 φ electron cyclotron resonance (ECR) plasma machine station, in which different geometrical contours and coupling manners are used to design an ECR plasma machine-station system that is suitable for large area wafer fabricating process. This invention includes the following units: a microwave source, which can generate 2.45 GHz microwave; circulator; dummy load; direction coupler; automatic matching instrument; electric wave mode converter; wave rotator; 500 φ microwave resonance cavity; microwave antenna; quartz microwave window; cooling fan; magnetic field source, which includes three sets of coils and is used to generate 873 gauss uniform planar magnetic field; 500 φ plasma reaction cavity body; 350 φ wafer holding base; vacuum connecting chamber; and molecular turbo pump. In this invention, high frequency rotation of electron in magnetic field (873 gauss) is mutually reacted with the right-rotating circularly polarized electromagnetic wave (2.45 GHz) to generate resonance. When this resonance is occurred in the vacuum gas pressure container (plasma reaction chamber), the gas molecules in the container will be ionized to form plasma.