Abstract
PURPOSE: A group III nitride light emitting diode for improving efficiency in a greenish yellow light wavelength band and a forming method thereof are provided to improve the luminous efficiency of a light emitting diode by eliminating a piezoelectric polarization effect. CONSTITUTION: A n-GaN(Gallium Nitride) nano post array(3) is ohmic-contacted to a first electrode. An indium GaN nano disc(4) is arranged on a n-GaN nano post. A p-type GaN nano post array(5) includes a p-type gallium nitride nano post. The p-type GaN nano post is corresponded to the n-GaN nano post. A second electrode is ohmic-connected to the p-type GaN nano post array.