Abstract
A 6T static random access memory cell, array, and memory thereof are provided, in which the memory cell includes a first inverter, a second inverter, a first access transistor, and a second access transistor. A first high supply voltage and a low supply voltage are coupled to the first inverter. A second high supply voltage and the low supply voltage are coupled to the second inverter. The first access transistor has a gate terminal coupled to a first word line. The first access transistor has a source terminal coupled to the first node. The second access transistor has a gate terminal coupled to a second word line, and the second access transistor has a source terminal coupled to the second node. The first word line provides ON signals to turn on the first access transistor, and the second high supply voltage provides a first differential voltage simultaneously.