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Capacitor Having A Graphene Structure, Semiconductor Device Including The Capacitor And Method Of Forming The Same
專利

Capacitor Having A Graphene Structure, Semiconductor Device Including The Capacitor And Method Of Forming The Same

Taiwan Semiconductor Manufacturing Company Ltd., Chih-Hsin Ko, Po-Wen Chiu, Chao-Ching Cheng, Chun-Chieh Lu, Chi-Feng Huang, Huan-Neng Chen 和 Fu-Lung Hsueh
25/02/2016

摘要

A capacitor includes a first graphene structure having a first plurality of graphene layers. The capacitor further includes a dielectric layer over the first graphene structure. The capacitor further includes a second graphene structure over the dielectric layer, wherein the second graphene structure has a second plurality of graphene layers.

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指標

1 檢視次數

詳細資料

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