摘要
A method for synthesizing graphene films is disclosed. Monolayer or multilayer graphene can be directly grown on the dielectric materials. The method includes the following steps: disposing dielectric materials and metals in a reactor, introducing reaction gases into the reactor and decomposing the reaction gases by heating, thus directly depositing graphene films on the surfaces of the dielectrics. High crystalline quality and low-defect graphene films can be synthesized directly on dielectric materials, without the process of wet etching and transfer. The method opens up a more direct route to apply graphene on electronics, optoelectronics, and bio-medical devices.