摘要
A dielectric element includes a superlattice structure which includes hafnium dioxide (HfO2) layers and zirconium dioxide (ZrO2) layers that are alternately stacked. The superlattice structure has a total thickness ranging from 2.0 nm to 5.5 nm and has a dielectric constant (K) ranging from 30 to 53. A thickness ratio of the hafnium dioxide layers to the zirconium dioxide layers is 1:1. A field-effect transistor (FET), a logic integrated circuit (logic IC), and a metal-insulator-metal (MIM) capacitor are also provided.