Abstract
Disclosed is a graphene transistor. The graphene transistor includes a source electrode, a drain electrode, a graphene layer, an insulating layer, a gate electrode and at least one doping layer. The graphene layer is disposed between the source electrode and the drain electrode. The gate electrode is separated from the graphene layer, the source electrode and the drain electrode by the insulating layer. The doping layer is disposed on the graphene layer or beneath the graphene layer for providing dopants for the graphene layer. The doping layer includes nonstoichiometric compounds. The graphene transistor of the present invention has a superior air stability and is not easily affected by environment.