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High Speed Built-In Self-Test Circuit For DRAMs
Patent

High Speed Built-In Self-Test Circuit For DRAMs

Taiwan Semiconductor Manufacturing Corporation, 黃錫瑜 and Kwai, Ding-Ming
26/02/2002

Abstract

A high-speed built-in self-test (BIST) circuit for dynamic random access memory (DRAM) is disclosed. The circuit automatically generates a sequence of pre-defined test patterns for on-chip DRAM testing. The circuit includes two finite state machines, instead of the conventional single finite state machine. Therefore, a pipeline technique can then be applied to divide the pattern generation process into stages, leading to a higher-speed design. In addition to pipelining, protocol-based relaxation is also presented. This technique, imposing a certain protocol on the two communicating finite state machines, further relaxes the timing criticality of the design.

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