Abstract
A group III nitrogen-based semiconductor package structure includes a lead frame, an adhesive layer, a group III nitrogen-based crystal grain, a packaging material and at least one bonding wire. The lead frame comprises a tube core seat and a lead. The tube core seat has first and second grooves disposed in a top surface of the tube core seat. The first groove is located near an opposite central region of the top surface. The second groove is located proximate an opposing peripheral region of the top surface. In a plan view, the first groove has a different shape from the second groove. An adhesive layer is disposed on the tube core seat to fill the first groove. Group III nitrogen-based grains are disposed on the adhesive layer. The packaging material packages the lead frame and the III-group nitrogen-based crystal grains. The second groove is filled with the packaging material. The bonding wire is encapsulated by the packaging material.