Abstract
A method of fabricating a silicon carbide (SiC) layer is disclosed, which comprises steps: (S1) heating a silicon-based substrate at a temperature of X .degree. C.; (S2) carburizating the silicon-based substrate with a first hydrocarbon-containing gas at a temperature of Y .degree. C. to form a carbide layer on the silicon-based substrate; (S3) annealing the silicon-based substrate with the carbide layer thereon at a temperature of Z .degree. C.; and (S4) forming a silicon carbide layer on the carbide layer with a second hydrocarbon-containing gas and a silicon-containing gas at a temperature of W .degree. C.; wherein, X is 800 to 1200; Y is 1100 to 1400; Z is 1200 to 1500; W is 1300 to 1550; and X<Y.ltoreq.Z.ltoreq.W. In the method of the present invention, since no cooling steps between respective steps are required, the full process time can be reduced and the cost is lowered because no energy consumption occurs for the cooling and the re-heating steps.