Abstract
A method is provided to integrate all active and passive integrated optical devices on a silicon (Si)-based integrated circuit (IC). A Si-based substrate, instead of a Si-on-insulator (SOI) substrate, is used for integrating the devices. Therefore, cost is down and heat dissipation efficiency is enhanced. Besides, rapid melt growth (RMG) is used for solving problems on integrating the electric circuit and the optical devices. The present invention can be used to develop a proactive optical transceivers on a standard chip; or, to fully and compatibly integrate all devices on a circuit for an optical communication chip.