Abstract
Methods for making transistors with a semiconducting monolayer and low contact resistance are disclosed. The source/drain terminals are on opposite sides of the semiconducting monolayer from the gate terminal. The contact and/or spacer regions of the semiconducting monolayer are covered with a dopant layer on the surface opposite the source/drain terminals. The gate dielectric layer directly contacts the semiconducting monolayer. The resulting structure maintains high mobility in the semiconducting layer and has low contact resistance.