Abstract
A mid-infrared light emitting diode is provided, including a graphene lower electrode layer, a black phosphorous layer, and a graphene upper electrode layer sequentially arranged along a thickness direction of the mid-infrared light emitting diode, in which the black phosphorous layer contacts the graphene lower electrode layer and the graphene upper electrode layer. A manufacturing method of the mid-infrared light emitting diode, a silicon photonic circuit and a manufacturing method thereof are also provided.