Abstract
A photo sensor includes a patterned shielding conductive layer disposed on a transparent substrate, and a buffer dielectric layer, a patterned semiconductor layer, and a dielectric layer disposed on the patterned shielding layer in order. The patterned semiconductor layer includes an intrinsic region, a first doped region, and a second doped region, wherein the first and second doped regions are positioned at two sides of the intrinsic region separately. A patterned transparent conductive layer is disposed on the dielectric layer and covers the boundary of the intrinsic region and the first doped region and the boundary of the intrinsic region and the second doped region. The patterned transparent conductive layer is electrically connected to the patterned shielding conductive layer.